www.roithner - laser.com 1 apd 230 - lcc description apd 230 - lcc is a silicon semiconductor avalanche photodiode with an active area of 230 m. it features extremely fast rise time of 250 ps, high gain at low bias voltage, and low capacitance. apd230 - lcc is typically used for laser range finding and li dar applications. maximum ratings parameter symbol values unit min. max. supply v oltage v pd 0.95 x v br v forward current i f 1 ma power dissipation p e 1 mw storage temperature t stg - 55 + 100 c operating temperature t op - 50 + 85 c characteristics (t case = 25c) parameter symbol values unit min. typ. max. s pectr al r esponse range 400 1100 nm peak s ensivity w avelength p 800 nm photosensitive area ? 230 m photosensitivity ( =800nm, e =1w, m=100) r e 0.35 0.45 a/w response t ime ( =800nm, f=1mh z,r l =50? ) t s 0.2 5 1 ns dark c urrent (m=100) i d 0.05 0.2 2 na cutoff frequency f c 1000 mhz terminal capacitance (m=100,f=1mhz) c t 1 .5 pf optimum g ain m 50- 60 b reakdown v oltage (i r =10a) v br 80 180 v temp . coefficient of v br ( t op = - 40c~85c) 0.4 v/c v 1. 1 05 .0 3 .201 4
www.roithner - laser.com 2 performance characteristic s responsivity vs. wavelength (0v) gain vs. u r /u br dark current vs. u r /u br capacitance vs. operating voltage application circuit
www.roithner - laser.com 3 drawing all dimensions in mm esd caution always do handle photodiodes with c aution to prevent electrostatic discharge, the primary cause of unexpected semiconductor failure. esd failures can be prevented by always wearing wris t straps, only using a grounded workplace, and following strict anti - static guidelines when handling the photodiode . ? all rights reserved the above specifications are for reference purpose only and subjected to change without prior notice
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